Rensselaer Professor Emily Liu Receives $1.8 Million DoE Award for Solar Power Systems Research

Li (Emily) Liu, associate professor of nuclear engineering and engineering physics in the Department of Mechanical, Aerospace, and Nuclear Engineering at Rensselaer Polytechnic Institute, has been selected by the U.S. Department of Energy Solar Energy Technologies Office (SETO) to receive a $1.8 million award to study high-temperature molten-salt properties and corrosion mechanisms. This award is part of a $72 million funding program to advance concentrating solar power (CSP) research, a power plant technology that could reduce the cost of solar energy.

Rensselaer receives $800,000 to investigate development of new accident mitigation strategies for nuclear power plants under extreme conditions

The U.S. Department of Energy (DOE) has announced nearly $64 million in awards for advanced nuclear energy technology to DOE national laboratories, industry, and 39 U.S. universities in 29 states. Rensselaer Polytechnic Institute has been awarded $800,000 for analysis of nuclear power plants’ accident propagation and mitigation processes.

Professor Wei Ji was awarded $800,000 for Research integration of high-fedelity Monte Carlo and deterministic transport into Workbench

Researchers will provide end users an ability to run both MCNP6 and PROTEUS codes from a common user input in Workbench by (1) templating user-provided engineering scale specifications to code-specific input requirements, (2) enabling multi-fidelity analysis of a system from a common input using MCNP6 and PROTEUS and (3) allowing the easy use of high-fidelity simulations to inform lower-order models for the design, analysis, and licensing of advanced nuclear systems and experiments.


PhD candidate Nicholas Thompson awarded NNSA Outstanding Poster
For poster Entitled: Measurements and Analysis of Neutron Capture Rates Using a Lead Slowing-Down Spectrometer. The poster was warded during the 2017 SSAP Symposium.

Professor Wei Ji was awarded a grant to Develop 2D and 3D transient electro-thermal computational models to predict the radiation failures in SiC-based Schottky diodes and power field-effect transistors (FETs)

To safely deploy SiC power devices for space missions, one has to first answer the question of how SiC-devices survive from the harsh radiation environment in space. Fundamental research into the radiation susceptibility and failure mechanisms of SiC is necessary.