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Department of Physics, Applied Physics, and Astronomy
Rensselaer Polytechnic Institute
110 Eighth Street, Troy, New York 12180-3590 USA

(518) 276-6310
Fax: (518) 276-6680

Peter Persans
Peter D. Persans  IGERT

Professor of Physics; Department Associate Head


(518) 276-2934

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B.S., Physics, Polytechnic Institute of New York, 1975.
S.M., Physics, University of Chicago, 1977.
Ph.D., Physics, University of Chicago, 1982 (Thesis advisor: H. Fritzsche).

Career Highlights:

Research Physicist: Exxon Corporate Research (1981-1986).
Physics Faculty: Rensselaer Polytechnic Institute (1986-present).

Research Interests:

Optical and structural properties of amorphous, nanocrystalline, and quantum dot semiconductor materials. Optical and optoelectronic materials. Introductory Physics education.

Selected Publications:

1. AJ Said, D Recht, JT Sullivan, J. Warrender, T Buonassisi, PD Persans, M Aziz, Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes, Appl Phys Lett, 99, 073503, (2011).

2. V Vuitton, BN Tran, PD Persans, J Ferris, Determination of the complex refractive indices of Titan haze analogs using photothermal deflection spectroscopy, Icarus, 203, 663-671, (2009).

3. C Wetzel, M Zhu, J Senawiratne, T Detchprom, PD Persans,  Light-emitting diode development on polar and non-polar GaN substrates, J Crystal Growth, 310, 3987, (2008).

4. A. Filin, K. Babocsi, M. Schmitt, P. D. Persans,  V. D. Kulakovskii, and W. Kiefer, “Exciton spin dephasing in CdSe nanocrystals embedded in glass”,  Phys Rev B 73:  125322  (2006).

5. Anyuan Cao, P. M. Ajayan, A. Filin, and P.D. Persans, “Tailoring the optical excitation energies of single-walled carbon nanotubes”, Appl. Phys. Lett. 85 1598 (2004).

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