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Department of Physics, Applied Physics, and Astronomy
Rensselaer Polytechnic Institute
110 Eighth Street, Troy, New York 12180-3590 USA

(518) 276-6310
Fax: (518) 276-6680

Michael Shur
Michael S. Shur  IGERT

Patricia W. and C. Sheldon Roberts ’48 Chaired Professor in Solid State Electronics; Professor of Electrical, Computer, and Systems Engineering; Professor of Physics, Applied Physics and Astronomy; Director, Center for Broadband Data Transport Science and Technology (primary appointment with ECSE)


(518) 276-2201


M.S., Electrical Engineering, St. Petersburg Electrotechnical Institute, 1965.
Ph.D., Physics, A. F. Ioffe Institute of Physics and Technology, St. Petersburg, Russia, 1967.
Dr. Sc., Physics and Mathematics, A. F. Ioffe Institute of Physics and Technology, 1992.

Career Highlights:

Michael Shur joined RPI in 1996. He is Fellow of IEEE, APS (life), ECS, IET, WIF, Electromagnetic Academy, MRS, and AAAS, and member of Eta Kappa Nu, Tau Beta Pi, ASEE, Member, former Chair of Commission D and Member of NRC of US URSI, life member of IEEE MTT, SPIE, Sigma Xi, and Humboldt Society. Dr. Shur is Editor-in-Chief of IJHSES and related book series, Regional Editor of physica status solidi, Member of the Honorary Board of Solid State Electronics and JSTS International Advisory Committee, Vice-President for Publications of the IEEE Sensor Council, Distinguished Lecturer of IEEE EDS, former Distinguished Lecturer of IEEE MTT and, and former Associate Editor of IEEE ED Transactions. He is co-founder and VP of Sensor Electronics Technology, Inc. He published many technical papers and books and has over 40 patents. His awards include an Honorary Doctorate, IEEE Donald Fink Best Paper Award, IEEE Kirchmayer Award, the Gold Medal of the Russian Education Ministry, several Best Paper awards, van der Ziel Award, Senior Humboldt Research Award, Pioneer Award from Compound Semi, RPI Engineering Research Award, and Commendation for Excellence in Technical Communications. Dr. Shur is listed by the Institute of Scientific Information as Highly Cited Researcher. He is Foreign Member of the Lithuanian Academy of Sciences.

Research Interests:

Solid State Devices
Shur's work with plasma wave excitation in submicron field effect transistors (FET) and related device structures should allow his lab to develop a new generation of solid-state terahertz (THz) tunable devices that will support numerous applications in biotechnology, microelectronics, and defense. His research has shown that a short channel field effect transistor (FET) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. The devices which use this resonance response should operate at much higher frequencies than conventional, transit-time limited devices — in the terahertz range — since the plasma waves propagate much faster than electrons. Recently, his team reported on a resonant detector operating in the terahertz range using an AlGaAs/GaAs 0.15 micron gate FET.

Selected Publications:

1. A. Gutin, T. Ytterdal, V. Kachorovskii, A. Muraviev, and M. Shur, THz SPICE for Modeling Detectors and Non-quadratic Response at Large Input Signal, IEEE Sensors Journal, Vol. 13, Issue: 1, pp. 52-62 (2013), DOI: 10.1109/JSEN.2012.2226647

2. V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, S. O. Yurchenko, V. Mitin, and M. S. Shur, Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator J. Appl. Phys. 112, 104507 (2012); 

3. V.V. Popov, O.V. Polischuk, A. Davoyan, V. Ryzhii, T. Otsuji, and M.S. Shur, Plasmonic Terahertz Lasing in an Array of Graphene Nanocavities, Phys. Rev. B 86, 195437 (2012)A.

4. M. Shur and R. Gaska, Deep Ultraviolet Light Emitting Diodes (Invited), IEEE Trans. ED, vol. 57, No 1, pp. 12-25 (2010)

5. M. Shur, Plasma Wave Terahertz Electronics, Electronics Letters, (Invited), pp. S18-S21 (2010)

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