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Department of Physics, Applied Physics, and Astronomy
Rensselaer Polytechnic Institute
110 Eighth Street, Troy, New York 12180-3590 USA

(518) 276-6310
Fax: (518) 276-6680

Gwo-Ching Wang
Gwo-Ching Wang  IGERT

Travelstead Institute Chair; Department of Physics, Applied Physics and Astronomy; Professor of Physics


(518) 276-8387

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Ph.D., University of Wisconsin-Madison, 1978 (Material Sciences).
M.S., Northern Illinois University, 1973 (Physics).
B.S., Cheng-Kung University, Taiwan, 1968 (Physics).

Career Highlights:

1978-80: Physicist, Electron Physics Group, National Institute of Standards and Technology, Gaithersburg, MD.
1980-84: Physicist, Surface Physics Group, Solid State Division, Oak Ridge National Laboratory.
1984-90: Associate Professor, Physics Department, Rensselaer Polytechnic Institute
1988: Granted tenure.
1991-present: Professor, Rensselaer Polytechnic Institute.
2000-2010: Chair of Department.

Research Interests:

Examples of research areas are non-equilibrium growth of metal and semiconductor films for energy applications, transport properties of metallic lines and films, fabrication and growth mechanism of oblique angle deposited films or sculpture films. The lab has been equipped with commercial and homemade techniques for fabrication and characterization of novel nanostructures. Examples of real space and diffraction techniques are scanning tunneling microscopy (STM), atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED), high resolution low energy electron diffraction (HRLEED), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), four point probe, magneto optic Kerr effect (MOKE), and magnetoresistance. Examples of growth techniques include thermal evaporation and sputter deposition.

Selected Publications:

1. “A study of Parylene coated Pd/Mg nanoblabes for reversible hydrogen storage”, Y. Liu1, Alexander Rzhevskii2, S. Rigos1, W.Y. Xie1, S.B. Zhang1, T.-M. Lu1, and G.-C. Wang1, 1 Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110,   8th St., Troy, NY 12180, 2 Thermo Fisher Scientific, Center of Excellence, 2 Radcliff Rd., Tewksbury, MA 01876, International Journal of Hydrogen storage, 7-MAR-2013, DOI information: 10.1016/j.ijhydene.2013.02.007

2. ”Orientational domains in metalorganic chemical vapor deposited CdTe(111) film on cube-textured Ni”, G.-C. Wanga, L. Zhangb, Kim Kisslinger b, C. Gairea, A. Goyald, I. Bhatc, T.-M. Lua

a Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180; b Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973; c Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180; d Oak Ridge National Lab, Oak Ridge, TN 37831­,Thin Solid Films 531, 217-221 (2013).

3. “Air stability of low-temperature dehydrogenation of Pd-decorated Mg blades”, Y. Liu and G.-C. Wang, Nanotechnology 23, 025401 (2012). doi:10.1088/0957-4484/23/2/025401

4. “Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition”, C. Gaire, S. Rao, M. Riley, L. Chen, A. Goyal, S. Lee, I. Bhat, T.-M. Lu, G.-C. Wang, Thin Solid Films 520, 1862-1865 (2012). DOI: 0.1016/j.tsf.2011.09.019

5. “Low temperature epitaxial growth of Ge on CaF2 buffered cube-textured Ni”, C. Gaire, J. Palazzo, I. Bhat, A. Goyal, G.-C. Wang, and T.-M. Lu, J. of Crystal Growth 343, 33 (2012). DOI:10.1016/j.jcrysgro.2012.01.035

6. “Incident flux angle induced crystal texture transformation in nanostructured molybdenum films”,  L. Chen, T.-M. Lu, and G.-C. Wang, J. Applied Physics 112, 024303 (2012). doi: 10.1063/1.4737403 (2012).

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